HCI lifetime correction based on self-heating characterization for SOI technology | INSTITUT DE PHYSIQUE DU GLOBE DE PARIS

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  HCI lifetime correction based on self-heating characterization for SOI technology

Type de publication:

Journal Article

Source:

Ieee Transactions on Device and Materials Reliability, Volume 7, Ticket 2, p.217-224 (2007)

ISBN:

1530-4388

Mots-clés:

(SOI); thermal coefficient resistance (TCR); thermal resistance

Résumé:

<p>
Self-heating (SH) effects, which were observed during the development of silicon-on-insulator (SOI) technology for high-performance circuits, raise questions concerning the validity of the extrapolation method used for hot carrier injection (HCI). In this paper, we propose a new methodology for lifetime prediction based on DC HCI stress for SOI technology. The SH is quantified using coupled DC HCI stress and gate resistance measurements for different transistor widths. Then, the degradation part due to SH is removed, enabling accurate HCI lifetime prediction when SH effects are present.</p>

Notes:

IEEE Trans. Device Mater. Reliab.Roux, Julien-Marc Federspiel, Xavier Roy, D. Abramowitz, P. 6 IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC